A 0.8V ∆Σ Modulator Using DTMOS Technique
نویسندگان
چکیده
A 0.8V second order ∆Σ modulator is designed in 0.18μm bulk CMOS technology. Dynamic threshold MOSFET (DTMOS) technique is used to enhance the performance of the circuit building blocks at very low supply voltage. Schematic and post layout simulation results are provided. In case of the amplifier with the embedded CMFB, the measurement results are presented. The modulator can achieve a SNR of approximately 80dB with an oversampling ratio (OSR) of 200 and consumes a power of 460μW.
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